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Nanostructures Bring Gains for Phase-Change Memory

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Phase-change memory holds information in the form of resistance and changes that resistance by melting and reforming its own crystal structure.

This phase-change memory is a 65-nanometer superlattice that could serve as an in-between technology between slower nonvolatile memory and DRAM.

Credit: Stanford University

Researchers from Stanford University, the University of Maryland, and Taiwan Semiconductor Manufacturing Co. developed a nanocomposite superlattice phase-change memory device.

The device is made with a new material that allows it to more easily regain its structure when a new bit is written.

The researchers produced 40-nanometer devices that run at 0.7 volts, switch in about 40 nanoseconds, and consume less than 1.5 picojoules of energy, with low resistance drift.

Said Stanford's Asir Intisar Khan, "With switching that low, logic and memory integration are possible."

From IEEE Spectrum
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Abstracts Copyright © 2024 SmithBucklin, Washington, D.C., USA


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